Gate-mesa trench enables enhanced β-Ga2O3 MOSFET with higher power figure of merit
نویسندگان
چکیده
Abstract In this article, a gate-mesa trench (GMT) β -Ga 2 O 3 metal-oxide-semiconductor field-effect transistor (MOSFET) device with enhanced performance and breakdown voltage improvement is proposed. Compared the gate-field plate (GFPT), power figure of merit (PFOM) GMT are 2566 V 680.53 MW cm −2 respectively, which 1.56 times 2.25 higher than those GFPT, demonstrating excellent performance. When etch depth 200 nm, specific on-resistance GFPT 8.84 mΩ 9.76 , peak transconductance being 61.56 mS mm −1 when epitaxial layer doping concentration × 10 17 cm-3, 1.22 that GMT. The high dielectric constant HfO can significantly improve PFOM device, while gate oxide Al drifts threshold to right. This article presents novel approach for designing high-performance MOSFETs.
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ژورنال
عنوان ژورنال: Engineering research express
سال: 2023
ISSN: ['2631-8695']
DOI: https://doi.org/10.1088/2631-8695/acf43d